Method of manufacturing SiC semiconductor device and SiC semiconductor device

A method for producing a SiC semiconductor device, comprising:

• a growth step of forming a growth layer on a workpiece comprising SiC single crystals based on physical vapor transport, a device formation step of forming at least a portion of a SiC semiconductor device in the growth layer, and a separation step of separating at least a portion of the SiC semiconductor device from the workpiece, wherein
• the growth step-comprises:
• performing a step of forming a first growth layer on the workpiece under a SiC—C equilibrium vapor pressure environment, followed by
• performing a step of forming a second growth layer on the workpiece under a SiC—Si equilibrium vapor pressure environment,
• wherein, in the growth step, the workpiece is housed in a SiC polycrystalline main container,
• in the step of forming the first growth layer, the SiC—C equilibrium vapor pressure environment is formed inside the main container by heating the main container, and
• in the step of forming the second growth layer, the SiC—Si equilibrium vapor pressure environment is formed inside the main container by installing a solid Si or a Si compound serving as a Si vapor supply source in the main container and heating the main container.