H10P 76/4083
Characterised by their behaviours during the lithography processes
Official title: {characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks}
H10P76/4083 (Characterised by their behaviours during the lithography processes) appears on 489 US grants and 510 published applications in this corpus.
Search patents in H10P- Granted patents
- 489
- Published applications
- 510
- Assignees
- 110
- Inventors
- 980
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 5 | 1 |
| 2002 | 4 | 4 |
| 2003 | 3 | 7 |
| 2004 | 3 | 7 |
| 2005 | 4 | 4 |
| 2006 | 4 | 2 |
| 2007 | 3 | 5 |
| 2008 | 2 | 2 |
| 2009 | 2 | 2 |
| 2010 | 3 | 4 |
| 2011 | 0 | 2 |
| 2012 | 1 | 1 |
| 2013 | 3 | 1 |
| 2014 | 5 | 11 |
| 2015 | 10 | 30 |
| 2016 | 38 | 44 |
| 2017 | 41 | 51 |
| 2018 | 48 | 48 |
| 2019 | 68 | 66 |
| 2020 | 52 | 55 |
| 2021 | 43 | 46 |
| 2022 | 37 | 42 |
| 2023 | 22 | 25 |
| 2024 | 34 | 25 |
| 2025 | 31 | 13 |
| 2026 | 11 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing memory device using self-aligned double patterning (SADP)6 Oct 2026US 12,757,690 B2Nanya Technology Corporation
- Method for processing a substrate25 Aug 2026US 12,721,114 B2Tokyo Electron Limited
- Method for semiconductor patterning using ion implanted organic masks11 Aug 2026US 12,707,943 B2Samsung Electronics Co., Ltd.
- Line-end extension method and device16 Jun 2026US 12,660,577 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Patterning material including carbon-containing layer and method for semiconductor device fabrication19 May 2026US 12,635,495 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming pattern and method of manufacturing semiconductor device1 Oct 2026US 2026/0305268 A1Samsung Electronics Co., Ltd.
- Doped underlayer suitable for extreme ultraviolet radiation dose reduction1 Oct 2026US 2026/0305269 A1ASM IP Holding B. V.
- Development method for patterning metal oxide photoresist24 Sep 2026US 2026/0288010 A1Tokyo Electron Limited
- Patterning material including carbon-containing layer andmethod for semiconductor device fabrication17 Sep 2026US 2026/0282864 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor device13 Aug 2026US 2026/0239720 A1Shanghai Huali Integrated Circuit Corporation
Most cited
By later US patents
- Via patterning using multiple photo multiple etch477US 9,754,818 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method for forming spacers using silicon nitride film for spacer-defined multiple patterning383US 10,468,251 B2ASM IP Holding B. V. · 2019
- Organic mandrel protection process346US 10,354,873 B2Tokyo Electron Limited · 2019
- Top corner rounding for shallow trench isolation130US 6,265,317 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2001
- Method of manufacturing a semiconductor device69US 4,352,724 AFujitsu Limited · 1982