Organic mandrel protection process

A method of patterning spacers in a multi-patterning scheme, the method comprising:

• providing an initial patterned structure on a substrate in a processing chamber, the initial patterned structure comprising an organic mandrel and an underlying layer;
• exposing the initial patterned structure in a direct current superposition (DCS) plasma treatment process, the DCS plasma treatment process depositing a layer of a first material on the initial patterned structure configured to protect the initial patterned structure during subsequent operations;
• performing an atomic layer conformal deposition process to deposit a second material, the first material providing protection to the organic mandrel at the beginning of the atomic layer conformal deposition process;
• performing a spacer etch mandrel pull (SEMP) process, the SEMP process creating a final patterned structure with a target final sidewall angle;
• concurrently controlling integration operating variables in the DCS plasma treatment process, the atomic layer conformal deposition process, and the SEMP process in order to meet integration objectives including the target final sidewall angle.