Method for semiconductor patterning using ion implanted organic masks
AssigneeSamsung Electronics Co., Ltd.
InventorsInoue Naoki, Tsunehiro Nishi
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Abstract
A method of manufacturing a semiconductor device includes sequentially disposing a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate, patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer, implanting ions into the first region of the organic layer exposed by the first mask pattern, removing the first mask pattern and a second region of the organic layer that is not ion-implanted to form a second mask pattern exposing a partial region of the hard mask layer, and removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern.
Claims20
A method of manufacturing a semiconductor device, comprising:
- sequentially disposing a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate;
- patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer;
- implanting ions into the first region of the organic layer exposed by the first mask pattern;
- removing the first mask pattern and a second region of the organic layer that is not ion-implanted to form a second mask pattern exposing a partial region of the hard mask layer;
- and
- removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern.
A method of manufacturing a semiconductor device, comprising:
- providing a substrate in which an active region defined by a device isolation layer is located;
- forming a word line extending in a first horizontal direction within the substrate;
- forming an etch target layer on the substrate;
- sequentially forming a hard mask layer, an organic layer, and a metal-containing photoresist layer covering the etch target layer;
- patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer;
- implanting ions into the first region of the organic layer exposed by the first mask pattern;
- removing the first mask pattern and a second region, which is not ion-implanted, of the organic layer to form a second mask pattern exposing a partial region of the hard mask layer;
- removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern exposing a portion of the etch target layer;
- and
- etching the etch target layer using the third mask pattern.
A method of manufacturing a semiconductor device, comprising:
- sequentially disposing an etch target layer, a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate;
- negative-patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer;
- implanting ions into the first region of the organic layer exposed by the first mask pattern;
- removing the first mask pattern;
- removing a second region, that is not ion-implanted, of the organic layer to form a second mask pattern exposing a partial region of the hard mask layer;
- removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern exposing a portion of the etch target layer;
- and
- etching the etch target layer using the third mask pattern,
- wherein the etching of the etch target layer includes forming a pattern which is a reverse pattern of the first mask pattern.
Dependencies are inferred from the claim text.