H10P 74/238
Comprising acting in response to an ongoing measurement without interruption of processing
Official title: {comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement}
H10P74/238 (Comprising acting in response to an ongoing measurement without interruption of processing) appears on 1,782 US grants and 1,868 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,782
- Published applications
- 1,868
- Assignees
- 485
- Inventors
- 3,890
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 7 | 0 |
| 1994 | 7 | 0 |
| 1995 | 15 | 0 |
| 1996 | 13 | 0 |
| 1997 | 20 | 0 |
| 1998 | 22 | 0 |
| 1999 | 31 | 0 |
| 2000 | 36 | 0 |
| 2001 | 49 | 27 |
| 2002 | 59 | 37 |
| 2003 | 54 | 40 |
| 2004 | 45 | 18 |
| 2005 | 21 | 38 |
| 2006 | 28 | 51 |
| 2007 | 20 | 43 |
| 2008 | 27 | 44 |
| 2009 | 26 | 44 |
| 2010 | 34 | 39 |
| 2011 | 30 | 34 |
| 2012 | 30 | 48 |
| 2013 | 28 | 60 |
| 2014 | 52 | 90 |
| 2015 | 74 | 112 |
| 2016 | 93 | 103 |
| 2017 | 148 | 138 |
| 2018 | 122 | 141 |
| 2019 | 128 | 116 |
| 2020 | 115 | 121 |
| 2021 | 102 | 105 |
| 2022 | 71 | 86 |
| 2023 | 65 | 89 |
| 2024 | 96 | 103 |
| 2025 | 60 | 82 |
| 2026 | 43 | 59 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Optical thickness control during a chemical mechanical polishing process and apparatus for effecting the same6 Oct 2026US 12,752,390 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Heating/cooling device and heating/cooling method6 Oct 2026US 12,757,671 B2Tokyo Electron Limited
- Method of manufacturing light emitting device22 Sep 2026US 12,745,605 B2Nichia Corporation
- Endpoint detection in low open area and/or high aspect ratio etch applications22 Sep 2026US 12,745,608 B2APPLIED Materials.Inc.
- Etching method and etching apparatus15 Sep 2026US 12,740,357 B2SCREEN Holdings Co., Ltd.
- Method for fabricating a semiconductor device using heat treatment apparatus8 Oct 2026US 2026/0314299 A1Samsung Electronics Co., Ltd.
- Polishing method and polishing apparatus1 Oct 2026US 2026/0305264 A1Ebara Corporation
- Wafer processing method and integrated etching-deposition equipment for wafer processing24 Sep 2026US 2026/0290769 A1Advanced Micro-Fabrication Equipment Inc. China
- Method and system of endpoint detection in etching process24 Sep 2026US 2026/0293614 A1Tokyo Electron Limited
- Method and system for thermal control of devices in an electronics tester17 Sep 2026US 2026/0276734 A1Aehr Test Systems
Most cited
By later US patents
- Plasma monitoring and control method and system625US 5,576,629 AFourth State Technology, Inc. · 1996
- Plasma monitoring and control method and system503US 5,939,886 AAdvanced Energy Industries, Inc. · 1999
- Detection of process endpoint through monitoring fluctuation of output data502US 6,745,095 B1APPLIED Materials.Inc. · 2004
- Apparatus and method for determining wafer temperature using pyrometry475US 5,305,417 ATexas Instruments Incorporated · 1994
- Film forming method, computer storage medium, and film forming system471US 9,741,559 B2Tokyo Electron Limited · 2017