Wafer processing method and integrated etching-deposition equipment for wafer processing

Abstract

Disclosed are a wafer processing method and integrated etching-deposition equipment for wafer processing. The method includes: providing a plasma processing apparatus; providing a to-be-processed wafer and placing the to-be-processed wafer in a plasma processing chamber; activating a plasma radio frequency source, introducing an etching gas to etch an etching region, so as to form a hole or a trench; and performing monitoring, switching between introducing a first mask precursor to deposit a mask or introducing the etching gas to continue etching according to a monitoring situation till monitoring that the hole or the trench formed in the etching region meets a target etching requirement, where the first mask precursor includes substituted methylsilane. Through real-time monitoring, a wafer processing working mode may be switched to an etching mode or a mask deposition mode for in-situ etching of the to-be-processed wafer or in-situ mask deposition without taking the to-be-processed wafer from the plasma processing chamber, so that the cost is lowered and the production cycle is shortened. The method is suitable for etching a large-sized silicon hole and a microstructure with a high or ultrahigh aspect ratio.

Dependencies are inferred from the claim text.