H10P 54/50
Cutting or separating of wafers, substrates or parts of devices: by scoring
Official title: by scoring, breaking or cleaving
H10P54/50 (Cutting or separating of wafers, substrates or parts of devices: by scoring) appears on 146 US grants and 155 published applications in this corpus.
Search patents in H10P- Granted patents
- 146
- Published applications
- 155
- Assignees
- 51
- Inventors
- 191
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 12 | 0 |
| 2001 | 10 | 2 |
| 2002 | 6 | 7 |
| 2003 | 6 | 7 |
| 2004 | 6 | 7 |
| 2005 | 4 | 10 |
| 2006 | 7 | 10 |
| 2007 | 4 | 6 |
| 2008 | 7 | 7 |
| 2009 | 3 | 4 |
| 2010 | 9 | 9 |
| 2011 | 7 | 7 |
| 2012 | 7 | 5 |
| 2013 | 2 | 9 |
| 2014 | 9 | 3 |
| 2015 | 6 | 5 |
| 2016 | 5 | 7 |
| 2017 | 4 | 3 |
| 2018 | 3 | 0 |
| 2019 | 1 | 4 |
| 2020 | 0 | 4 |
| 2021 | 3 | 5 |
| 2022 | 3 | 8 |
| 2023 | 4 | 3 |
| 2024 | 8 | 6 |
| 2025 | 2 | 7 |
| 2026 | 3 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing a composite structure comprising a thin single-crystal semiconductor layer on a carrier substrate5 May 2026US 12,622,189 B2Soitec
- Method of implanting semiconductor donor substrate and method of manufacturing semiconductor-on-insulator structure31 Mar 2026US 12,593,632 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for transferring a thin layer onto a receiver substrate including cavities and a region devoid of cavities13 Jan 2026US 12,525,489 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion11 Nov 2025US 12,469,743 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Membrane transfer method21 Oct 2025US 12,448,284 B2Soitec
- Method for slicing crystal material, method for manufacturing wafer, and member comprising crystal material17 Sep 2026US 2026/0275573 A1National University Corporation Chiba University
- Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage Region23 Jul 2026US 2026/0215174 A1Wolfspeed, Inc.
- Chip production method and cutting device25 Jun 2026US 2026/0182289 A1Disco Corporation
- A source wafer and methods related thereto for micro-transfer printing11 Jun 2026US 2026/0165061 A1Imec Vzw
- Semiconductor device and method for manufacturing the same23 Apr 2026US 2026/0114011 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method of producing a thin layer of semiconductor material453US 6,020,252 ACommissariat A L' Energie Atomique · 2000
- Process for the manufacture of thin films of semiconductor material430US 5,714,395 ACommissariat A L' Energie Atomique · 1998
- Controlled cleavage process and device for patterned films426US 5,985,742 ASilicon Genesis Corporation · 1999
- Controlled cleavage process and device for patterned films344US 6,528,391 B1Silicon Genesis Corporation · 2003
- Method of producing a thin layer of semiconductor material323US 6,809,009 B2Commissariat A L' Energie Atomique · 2004