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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsThierry Salvetat, Guillaume Berre
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A method for transferring a semiconductor layer from a donor substrate having a weakening plane to a receiver substrate having comprising a bonding face that has open cavities includes putting the donor substrate and the bonding face of the receiver substrate in contact, producing an assembly wherein the cavities are buried, and separating the assembly by fracture along the weakening plane. The bonding face of the receiver substrate includes, apart from the open cavities, a bonding surface that comes into contact with the donor substrate when the assembly is produced. The bonding surface includes a region devoid of cavities one dimension of which is at least 100 μm and which has a surface area of at least 1 mm2, and an intercavity space that occupies from 15 to 50% of the bonding face of the receiver substrate.
A method for transferring a semiconductor layer from a donor substrate comprising a weakening plane to a receiver substrate comprising a bonding face that has open cavities, comprising:
A substrate comprising a bonding face having open cavities, configured to serve as a receiver substrate in a method for transferring a semiconductor layer from a donor substrate having a weakening plane to the receiver substrate, the method comprising producing, by putting the donor substrate and the bonding face of the receiver substrate in contact, an assembly wherein the cavities are buried and separating the assembly by fracture along the weakening plane,
Dependencies are inferred from the claim text.