Method of implanting semiconductor donor substrate and method of manufacturing semiconductor-on-insulator structure

A method of a semiconductor-on-insulator structure, comprising:

• providing a semiconductor donor substrate;
• performing a first implantation process to form an exfoliation layer of the semiconductor donor substrate with a first ion concentration;
• performing a second implantation process on a perimeter region of the exfoliation layer to form a high concentration region of the exfoliation layer with a second ion concentration higher than the first ion concentration;
• bonding the semiconductor donor substrate to a semiconductor handle substrate, so that the exfoliation layer with the high concentration region is bonded to the semiconductor handle substrate;
• and
• performing an annealing process to separate the exfoliation layer from the rest of the semiconductor donor substrate;
• wherein the annealing process comprises:
• heating the semiconductor donor substrate up to a first heating temperature for a first period of time;
• and
• heating the semiconductor donor substrate up to a second heating temperature higher than the first heating temperature for a second period of time longer than the first period of time;
• wherein the semiconductor donor substrate comprises a lithium niobate substrate, the first heating temperature ranges substantially from 90° C. to 150° C., and the second heating temperature ranges substantially from 220° C. to 280° C.

A method of a semiconductor-on-insulator structure, comprising:

• providing a semiconductor donor substrate;
• performing a first implantation process to form an exfoliation layer of the semiconductor donor substrate;
• performing a second implantation process on a perimeter region of the exfoliation layer to form a high concentration region of the exfoliation layer;
• bonding the semiconductor donor substrate to a semiconductor handle substrate, so that the exfoliation layer with the high concentration region is bonded to the semiconductor handle substrate;
• and
• performing a first annealing process to heat up the semiconductor donor substrate to a first temperature;
• and
• performing a second annealing process to heat up the semiconductor donor substrate to a second temperature higher than the first temperature to separate the exfoliation layer from the rest of the semiconductor donor substrate;
• wherein the second implantation process is performed on the perimeter region and an inner region of the exfoliation layer, and the inner region is surrounded by the perimeter region.