H10P 50/61
Electrolytic etching
H10P50/61 (Electrolytic etching) appears on 297 US grants and 231 published applications in this corpus.
Search patents in H10P- Granted patents
- 297
- Published applications
- 231
- Assignees
- 169
- Inventors
- 688
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 4 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 2 | 0 |
| 1983 | 7 | 0 |
| 1984 | 5 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 4 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 7 | 0 |
| 1993 | 6 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 11 | 0 |
| 2001 | 11 | 1 |
| 2002 | 5 | 10 |
| 2003 | 9 | 5 |
| 2004 | 7 | 8 |
| 2005 | 5 | 15 |
| 2006 | 9 | 7 |
| 2007 | 4 | 2 |
| 2008 | 2 | 2 |
| 2009 | 4 | 5 |
| 2010 | 4 | 2 |
| 2011 | 4 | 3 |
| 2012 | 6 | 2 |
| 2013 | 2 | 8 |
| 2014 | 5 | 2 |
| 2015 | 8 | 20 |
| 2016 | 10 | 7 |
| 2017 | 8 | 12 |
| 2018 | 9 | 7 |
| 2019 | 11 | 15 |
| 2020 | 14 | 21 |
| 2021 | 11 | 17 |
| 2022 | 16 | 18 |
| 2023 | 12 | 13 |
| 2024 | 6 | 10 |
| 2025 | 10 | 7 |
| 2026 | 3 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Control and localization of porosity in III-nitrides and methods of using and making thereof11 Aug 2026US 12,707,907 B2Yale University
- Porous III-nitrides and methods of using and making thereof24 Mar 2026US 12,588,433 B2Yale University
- Forming a planar semiconductor surface17 Feb 2026US 12,557,571 B2The Boeing Company
- Wet etch apparatus2 Dec 2025US 12,489,001 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory device and method of making thereof using sacrificial material regrowth23 Sep 2025US 12,426,267 B2SanDisk Technologies LLC
- Method for manufacturing a plurality of semiconductor chips24 Sep 2026US 2026/0293565 A1ams-OSRAM International GmbH
- Systems and methods for controlling porous resistivities10 Sep 2026US 2026/0271688 A1IQE plc
- Porous pseudo-substrates for group iii-nitrides27 Aug 2026US 2026/0255641 A1
- Electro-etching method for an area-selective treatment of a substrate13 Aug 2026US 2026/0234830 A1Lam Research Salzburg GmbH
- Method for manufacturing microstructures6 Aug 2026US 2026/0231708 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
Most cited
By later US patents
- Porous silicon post processing138US 10,134,837 B1QUALCOMM Incorporated · 2018
- Apparatus and method for the electrochemical etching of a wafer120US 6,103,096 AInternational Business Machines Corporation · 2000
- Method of producing semiconductor member and method of producing solar cell99US 6,190,937 B1Canon Kabushiki Kaisha · 2001
- Process for anisotropic etching of silicon plates89US 5,071,510 ARobert Bosch GmbH · 1991
- Method for making thin film semiconductor87US 6,107,213 ASony Corporation · 2000