H10P 50/617
Of group iii-v materials
Official title: {of Group III-V materials}
H10P50/617 (Of group iii-v materials) appears on 88 US grants and 69 published applications in this corpus.
Search patents in H10P- Granted patents
- 88
- Published applications
- 69
- Assignees
- 52
- Inventors
- 184
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 6 | 0 |
| 1984 | 3 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 0 |
| 2003 | 2 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 2 |
| 2006 | 2 | 2 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 2 |
| 2014 | 1 | 1 |
| 2015 | 3 | 5 |
| 2016 | 3 | 2 |
| 2017 | 3 | 5 |
| 2018 | 4 | 1 |
| 2019 | 5 | 6 |
| 2020 | 3 | 7 |
| 2021 | 5 | 6 |
| 2022 | 6 | 12 |
| 2023 | 5 | 7 |
| 2024 | 3 | 4 |
| 2025 | 3 | 3 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Control and localization of porosity in III-nitrides and methods of using and making thereof11 Aug 2026US 12,707,907 B2Yale University
- Porous III-nitrides and methods of using and making thereof24 Mar 2026US 12,588,433 B2Yale University
- Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure24 Jun 2025US 12,342,661 B2Centre National De La Recherche Scientifique
- Method for electrochemically etching a semiconductor structure17 Jun 2025US 12,336,325 B2Cambridge Enterprise Limited
- Method for manufacturing structure22 Apr 2025US 12,283,487 B2Sumitomo Chemical Company, Limited
- Porous pseudo-substrates for group iii-nitrides27 Aug 2026US 2026/0255641 A1
- Method for manufacturing microstructures6 Aug 2026US 2026/0231708 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Parallelized three-dimensional semiconductor fabrication26 Feb 2026US 2026/0060015 A1Nielson Scientific, LLC
- Method for manufacturing a substrate comprising a relaxed ingan layer and substrate thus obtained for the resumption of growth of a led structure9 Oct 2025US 2025/0318322 A1Centre National De La Recherche Scientifique
- Method for electrochemically etching a semiconductor structure18 Sep 2025US 2025/0294919 A1Cambridge Enterprise Limited
Most cited
By later US patents
- Ultra-thin semiconductor membranes63US 4,952,446 ACornell Research Foundation, Inc. · 1990
- Photoelectrochemical wet etching of group III nitrides33US 5,773,369 AThe Regents of the University of California · 1998
- Photoelectrochemical etching of semiconductors31US 4,369,099 ABell Telephone Laboratories, Incorporated · 1983
- Mask structures for photoetching procedures30US 4,391,683 ABell Telephone Laboratories, Incorporated · 1983
- Semiconductor etching process28US 4,613,417 AAT&T Bell Laboratories · 1986