Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure

A method for manufacturing a relaxed epitaxial InGaN layer from a GaN/InGaN substrate comprising the following steps:

• a) providing a first stack comprising successively a GaN or InGaN layer to be porosified and a barrier layer,
• b) transferring the GaN or InGaN layer to be porosified and the barrier layer to a porosification support, the barrier layer being disposed between the porosification support and the GaN or InGaN layer to be porosified, in such a way as to form a second stack,
• c) forming a mask on the GaN or InGaN layer to be porosified,
• d) porosifying the GaN or InGaN layer through the mask, whereby a porous GaN or InGaN layer is formed,
• e) transferring the porous GaN or InGaN layer and the barrier layer to a support of interest, the porous GaN or InGaN layer being disposed between the support of interest 31 and the barrier layer, whereby an intermediate substrate is formed,
• f) forming an InGaN layer by epitaxy on the intermediate substrate, whereby a relaxed epitaxial InGaN layer is obtained on the intermediate substrate.