H10N 80/10
Gunn-effect devices
H10N80/10 (Gunn-effect devices) appears on 57 US grants and 27 published applications in this corpus.
Search patents in H10N- Granted patents
- 57
- Published applications
- 27
- Assignees
- 42
- Inventors
- 107
- Latest grant
- 22 Oct 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 5 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 3 |
| 2003 | 3 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 2 |
| 2007 | 1 | 3 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 3 |
| 2019 | 2 | 2 |
| 2020 | 3 | 3 |
| 2021 | 2 | 3 |
| 2022 | 1 | 2 |
| 2023 | 4 | 1 |
| 2024 | 2 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Gunn diode and method of manufacturing the same22 Oct 2024US 12,127,490 B2Technische Universität Darmstadt
- Gunn diode and method for generating a terahertz radiation27 Feb 2024US 11,917,931 B2Technische Universität Darmstadt
- Pulse compression photoconductive semiconductor switches31 Oct 2023US 11,805,715 B2Lawrence Livermore National Security, LLC
- Electrical-current control of structural and physical properties via strong spin-orbit interactions in canted antiferromagnetic Mott insulators19 Sep 2023US 11,765,989 B2The Regents of the University of Colorado
- Terahertz Gunn oscillator using gallium nitride29 Aug 2023US 11,742,800 B2SixPoint Materials, Inc.
- Gunn diode with layered structure19 Mar 2026US 2026/0082828 A1
- Terahertz gunn oscillator using gallium nitride25 May 2023US 2023/0163724 A1SixPoint Materials, Inc.
- Gunn diode and method of manufacturing the same27 Oct 2022US 2022/0344587 A1Technische Universität Darmstadt
- Pulse compression photoconductive semiconductor switches21 Apr 2022US 2022/0123211 A1Lawrence Livermore National Security, LLC
- Gunn diode and method for generating a terahertz radiation21 Oct 2021US 2021/0328143 A1Technische Universität Darmstadt
Most cited
By later US patents
- Semiconductor device comprising projecting contact layers215US 4,189,342 AU. S. Philips Corporation · 1980
- Gallium nitride material devices and methods including backside vias120US 6,611,002 B2Nitronex Corporation · 2003
- Gallium nitride material devices and methods of forming the same72US 7,233,028 B2Nitronex Corporation · 2007
- Hot electron injector Gunn device with anode heat sink22US 5,250,815 AU. S. Philips Corporation · 1993
- Transferred electron effect device22US 5,258,624 AU. S. Philips Corporation · 1993