Gunn diode and method for generating a terahertz radiation
AssigneeTechnische Universität Darmstadt
InventorsOktay Yilmazoglu, Ahid S. Hajo
Life of this patent
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Abstract
The invention relates to a Gunn diode comprising a first contact layer (110); a second contact layer (120); an active layer (130) based on a gallium nitride (GaN)-based semiconductor material, said active layer being formed between the first contact layer (110) and the second contact layer (120); a substrate (140) on which the active layer (130) is formed together with the first contact layer (110) and the second contact layer (120); and an optical inlet (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by means of laser irradiation.
Claims14
A Gunn diode, comprising:
- a first contact layer (110) and a second contact layer (120);
- an active layer (130) based on a gallium nitride (GaN) semiconductor material which is formed between the first contact layer (110) and the second contact layer (120);
- a substrate (140) on which the active layer (130) is formed with the first contact layer (110) and the second contact layer (120);
- an optical input (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by means of laser irradiation;
- and
- a field plate (170), made of metal, wherein the active layer (130) is formed between the field plate (170) and the substrate (140), without protruding laterally over the field plate (170).
A Gunn diode, comprising:
- a first contact layer (110) and a second contact layer (120);
- an active layer (130) based on a gallium nitride (GaN) semiconductor material which is formed between the first contact layer (110) and the second contact layer (120);
- a substrate (140) on which the active layer (130) is formed with the first contact layer (110) and the second contact layer (120);
- and
- an optical input (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by means of laser irradiation,
- wherein the optical input (150) is formed by a material that is transparent for the laser for at least one of the following components:
- the first contact layer (110),
- the second contact layer (120),
- a passivation layer (160) arranged in such manner that the active layer (130) is formed with the first contact layer (110) and the second contact layer (120) between the passivation layer (160) and the substrate (140).
A method for generating terahertz radiation, comprising:
- providing a Gunn diode, comprising
- a first contact layer (110) and a second contact layer (120),
- an active layer (130) based on a gallium nitride (GaN) semiconductor material which is formed between the first contact layer (110) and the second contact layer (120),
- a substrate (140) on which the active layer (130) is formed with the first contact layer (110) and the second contact layer (120), and
- an optical input (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by laser irradiation;
- applying (S110) a supply voltage to the Gunn diode;
- and
- irradiating (S120) the Gunn diode with a laser beam in order to trigger or support a charge carrier transfer in the active layer (130) of the Gunn diode.
Dependencies are inferred from the claim text.