H10N 80/00
Bulk negative-resistance effect devices
Official title: Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N89/00)
H10N80/00 (Bulk negative-resistance effect devices) appears on 98 US grants and 67 published applications in this corpus.
Search patents in H10N- Granted patents
- 98
- Published applications
- 67
- Assignees
- 66
- Inventors
- 188
- Latest grant
- 3 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 5 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 3 |
| 2003 | 3 | 1 |
| 2004 | 2 | 2 |
| 2005 | 0 | 2 |
| 2006 | 1 | 2 |
| 2007 | 1 | 5 |
| 2008 | 2 | 4 |
| 2009 | 0 | 1 |
| 2010 | 2 | 3 |
| 2011 | 2 | 0 |
| 2012 | 4 | 6 |
| 2013 | 6 | 6 |
| 2014 | 4 | 3 |
| 2015 | 4 | 4 |
| 2016 | 2 | 2 |
| 2017 | 0 | 1 |
| 2018 | 1 | 4 |
| 2019 | 3 | 3 |
| 2020 | 4 | 4 |
| 2021 | 3 | 5 |
| 2022 | 1 | 3 |
| 2023 | 4 | 1 |
| 2024 | 2 | 0 |
| 2025 | 0 | 1 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Neuron and neuromorphic system including the same3 Feb 2026US 12,541,678 B2Industry-University Cooperation Foundation Hanyang University
- Gunn diode and method of manufacturing the same22 Oct 2024US 12,127,490 B2Technische Universität Darmstadt
- Gunn diode and method for generating a terahertz radiation27 Feb 2024US 11,917,931 B2Technische Universität Darmstadt
- Pulse compression photoconductive semiconductor switches31 Oct 2023US 11,805,715 B2Lawrence Livermore National Security, LLC
- Electrical-current control of structural and physical properties via strong spin-orbit interactions in canted antiferromagnetic Mott insulators19 Sep 2023US 11,765,989 B2The Regents of the University of Colorado
- Gunn diode with layered structure19 Mar 2026US 2026/0082828 A1
- Tunneling barrier resistor and methods for forming the same18 Dec 2025US 2025/0386523 A1SanDisk Technologies LLC
- Terahertz gunn oscillator using gallium nitride25 May 2023US 2023/0163724 A1SixPoint Materials, Inc.
- Gunn diode and method of manufacturing the same27 Oct 2022US 2022/0344587 A1Technische Universität Darmstadt
- Pulse compression photoconductive semiconductor switches21 Apr 2022US 2022/0123211 A1Lawrence Livermore National Security, LLC
Most cited
By later US patents
- Semiconductor device comprising projecting contact layers215US 4,189,342 AU. S. Philips Corporation · 1980
- Method of fabricating a three-dimensional array of active media167US 6,690,026 B2Intel Corporation · 2004
- Gallium nitride material devices and methods including backside vias120US 6,611,002 B2Nitronex Corporation · 2003
- Gallium nitride material devices and methods of forming the same72US 7,233,028 B2Nitronex Corporation · 2007
- Negative resistance heterojunction devices26US 4,257,055 AUniversity of Illinois Foundation · 1981