Neuron and neuromorphic system including the same

A neuromorphic system, comprising:

• one or more pre-neurons;
• one or more synapses electrically connected to the one or more pre-neurons;
• and
• one or more post-neurons electrically connected to the one or more synapses and each comprising a metal insulator metal (MIM) device comprising a metal ion-doped insulating layer,
• wherein the one or more post-neurons perform integration and fire,
• wherein the metal ion-doped insulating layer comprises a plurality of metal vacancies which form a plurality of metal bridges in the metal ion-doped insulating layer,
• wherein the plurality of metal bridges are formed to have at least one thickness based on a number of the plurality of metal vacancies to create at least one of a high-resistance state or a low resistance state by at least one of an applied set voltage or a reset voltage, the at least one thickness comprising a first thickness and a second thickness wider than the first thickness,
• wherein, based on the high-resistance state, the plurality of metal bridges are formed to the first thickness, the first thickness being configured to be broken,
• wherein, based on the low-resistance state, the plurality of metal bridges are formed to the second thickness,
• wherein the integration is a process in which an electrical signal (input spikes) input through the one or more synapses is integrated in a form of a potential,
• wherein the fire is a process in which the accumulated potential reaches a first threshold and an electrical signal (output spikes) is output to adjacent neurons,
• wherein the MIM device comprising the metal ion-doped insulating layer performs the integration, and performs the fire when resistance reaches a threshold resistance (Rth) selected according to a predetermined precision and a predetermined reproducibility of a neural network composed of the neuron and the adjacent neurons.