Gunn diode with layered structure

A device comprising:

• a first layer comprising indium, aluminum, and arsenic;
• a second layer comprising indium, gallium, and arsenic;
• a third layer comprising a first doped semiconductor region and a second doped semiconductor region, wherein the first and second doped semiconductor regions comprise indium, gallium, and arsenic, and wherein the first layer is between the second layer and the third layer;
• a first conductive structure coupled to the first doped semiconductor region;
• and
• a second conductive structure coupled to the second doped semiconductor region.

A diode comprising:

• a first layer comprising indium, aluminum, and arsenic, the first layer having a first thickness between 10 nanometers (nm) and 30 nm;
• and
• a second layer comprising:
• a first region over a first portion of the first layer;
• and
• a second region over a second portion of the first layer, the first region and the second region comprising indium, gallium, and arsenic, and the second layer having a second thickness between 5 and 10 nm.