US 2023/0163724 A1 · TERAHERTZ GUNN OSCILLATOR USING GALLIUM NITRIDE

Abstract

The present invention provides a terahertz oscillator utilizing a GaN Gunn diode. A terahertz wave is generated in the active layer of the Gunn diode fabricated on GaN substrate. A GaN substrate is designed to act as a waveguide of the terahertz wave. Since the waveguide and the Gunn diodes are integrated, the terahertz wave generated in the active layer couples well with the waveguide made of the GaN substrates. The terahertz wave is emitted from the edge of the waveguide efficiently. To ensure high-reliability through reduction of radiation loss and mitigation of electromigration of anode metal, a GaN substrate with low dislocation density is used. The dislocation density of the GaN substrate is less than 1×106 cm−2. Particularly, usage of a GaN substrate made by the ammonothermal method is preferred.

Claims20

Dependent claims

A terahertz oscillator to generate a terahertz wave of a wavelength λ in air between 0.1 mm and 1 mm, comprising a Gunn diode comprising a GaN substrate having n-type conduction, an anode contact on a first major side of the GaN substrate, and the Gunn diode is configured to emit a terahertz wave formed on a second major side of the GaN substrate, wherein:

the GaN substrate forms a slab waveguide having first and second lateral boundaries and having first and second termination edges, with the GaN substrate having a longitudinal dimension of L in a longitudinal direction, lateral dimension of W, and thickness of T;
the Gunn diode emits the terahertz wave in the slab waveguide;
and the slab waveguide is configured to conduct the terahertz wave along the longitudinal direction, and to emit the terahertz wave at first and second termination edges of the slab waveguide during operation.

Dependencies are inferred from the claim text.

Terahertz gunn oscillator using gallium nitride

Life of this patent

Terahertz gunn oscillator using gallium nitride

Life of this patent

Abstract

Claims20