Gunn diode and method of manufacturing the same
AssigneeTechnische Universität Darmstadt
InventorsOktay Yilmazoglu, Ahid S. Hajo
Life of this patent
Estimating the term…
Abstract
A Gunn diode is disclosed which comprises a first contact layer, a second contact layer, and an active layer based on a gallium nitride (GaN) semiconductor material having a base surface and a side surface non-parallel thereto. Optionally, related materials such as aluminum indium gallium nitride (AlInGaN) materials may also be used as the active layer. The first contact layer electrically contacts the side surface to form a side contact. The second contact layer forms an electrical contact for the base surface, so that a maximum of the electric field strength is formed when an electric voltage is applied between the first contact layer and the second contact layer at the side contact.
Claims15
A Gunn diode, comprising:
- a first contact layer and a second contact layer;
- an active layer based on a semiconductor material with gallium nitride or aluminum indium gallium nitride (AlInGaN) having a base surface, a front surface opposite the base surface, and a side surface non-parallel thereto, wherein the second contact layer forms an electrical contact for the base surface;
- and
- an intermediate passivation between the front surface and the first contact layer,
- wherein the first contact layer electrically contacts the side surface to form a side contact,
- wherein an electric field forms upon application of an electric voltage between the first contact layer and the second contact layer, and
- wherein the electric field has a maximum electric field strength at the side contact.
A method of manufacturing a Gunn diode, comprising the following steps:
- providing a second contact layer;
- forming an active layer based on a gallium nitride (GaN) semiconductor material having a base surface, a front surface opposite the base surface, and a non-parallel side surface, wherein the second contact layer forms an electrical contact for the base surface;
- forming an intermediate passivation and forming a first contact layer, wherein the intermediate passivation is formed between the front surface and the first contact layer;
- and
- forming an electrical side contact between the side surface and the first contact layer,
- wherein an electrical field forms upon application of an electrical voltage between the first contact layer and the second contact layer,
- wherein the electric field has a maximum electric field strength at the side contact.
Dependencies are inferred from the claim text.