Hot electron injector Gunn device with anode heat sink
AssigneeU.S. Philips Corporation
InventorsStephen J. Battersby, Stewart B. Jones
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AssigneeU.S. Philips Corporation
InventorsStephen J. Battersby, Stewart B. Jones
Estimating the term…
A transferred electron effect device (1) has adjacent its cathode contact region (3) an injection zone (60) defining a potential barrier (P) for causing electrons to be emitted, under the influence of an electric field applied between the cathode and anode contact regions (3 and 4), into the active region (5) of the device with an energy comparable to that of a relatively high mass, low mobility satellite minimum (L) of the active region (5). The anode contact region (4), active region (5), injection zone (60) and cathode contact region (3) are grown sequentially, for example using molecular beam epitaxy, on a substrate which is then selectively removed to expose the anode contact region. A heat sink (70) is provided in thermal contact with the anode contact region (4). Providing the heat sink (70) in thermal contact with the anode contact region (4) rather than the cathode contact region (3) enables a significant increase in rf output power.
A transferred electron effect device comprising a semiconductor body having cathode and anode contact regions, an active region of n conductivity type disposed between the contact regions and formed of a semiconductor material having a relatively low mass, high mobility conduction band main minimum and at least one relatively high mass, low mobility conduction band satellite minimum, and an injection zone adjoining the active region and defining a potential barrier between the cathode contact region and the active region for causing electrons to be emitted, under the influence of an electric field applied between the cathode and anode contact regions, from the injection zone into the active region with an energy comparable to that of a relatively high mass, low mobility conduction band satellite minimum of the active region, characterized in that the device is provided with a heat sink region and the anode contact region but not the cathode contact region is in thermal contact with said heat sink region for removing heat dissipated within the semiconductor body, said cathode contact region being free of any heat sink.
Dependencies are inferred from the claim text.