Gunn diode and method for generating a terahertz radiation
AssigneeTechnische Universität Darmstadt
InventorsOktay Yilmazoglu, Ahid S. Hajo
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Abstract
The invention relates to a Gunn diode comprising a first contact layer (110); a second contact layer (120); an active layer (130) based on a gallium nitride (GaN)-based semiconductor material, said active layer being formed between the first contact layer (110) and the second contact layer (120); a substrate (140) on which the active layer (130) is formed together with the first contact layer (110) and the second contact layer (120); and an optical inlet (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by means of laser irradiation.
Claims15
A Gunn diode with:
- a first contact layer (110) and a second contact layer (120);
- an active layer (130) based on a gallium nitride (GaN) semiconductor material which is formed between the first contact layer (110) and the second contact layer (120);
- a substrate (140) on which the active layer (130) is formed with the first contact layer (110) and the second contact layer (120);
- and
- an optical input (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (140) by means of laser irradiation.
Dependencies are inferred from the claim text.