H10N 30/708
Intermediate layers
Official title: {Intermediate layers, e.g. barrier, adhesion or growth control buffer layers}
H10N30/708 (Intermediate layers) appears on 456 US grants and 643 published applications in this corpus.
Search patents in H10N- Granted patents
- 456
- Published applications
- 643
- Assignees
- 175
- Inventors
- 948
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 1 |
| 2002 | 3 | 4 |
| 2003 | 2 | 8 |
| 2004 | 3 | 5 |
| 2005 | 5 | 18 |
| 2006 | 8 | 12 |
| 2007 | 14 | 7 |
| 2008 | 5 | 9 |
| 2009 | 10 | 9 |
| 2010 | 5 | 13 |
| 2011 | 12 | 10 |
| 2012 | 11 | 20 |
| 2013 | 12 | 31 |
| 2014 | 18 | 28 |
| 2015 | 23 | 35 |
| 2016 | 31 | 20 |
| 2017 | 24 | 46 |
| 2018 | 25 | 23 |
| 2019 | 22 | 29 |
| 2020 | 32 | 42 |
| 2021 | 18 | 47 |
| 2022 | 22 | 54 |
| 2023 | 34 | 72 |
| 2024 | 41 | 29 |
| 2025 | 39 | 40 |
| 2026 | 31 | 31 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Hybrid structure for a surface acoustic wave device6 Oct 2026US 12,757,634 B2Soitec
- Microphone device based on two-dimensional piezoelectric material layer having protective layer formed thereon, and method for fabricating the same22 Sep 2026US 12,745,045 B2Research & Business Foundation Sungkyunkwan University
- Manufacturing method of piezoelectric element, piezoelectric element, and liquid droplet dispensing head22 Sep 2026US 12,745,565 B2Seiko Epson Corporation
- Piezoelectric element including diffusion inhibition layer between substrate and piezoelectric layer, and piezoelectric element application device1 Sep 2026US 12,727,388 B2Seiko Epson Corporation
- ScAlN laminate and manufacturing method thereof25 Aug 2026US 12,715,768 B2National Institute of Advanced Industrial Science and Technology
- Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus1 Oct 2026US 2026/0296010 A1Seiko Epson Corporation
- Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus24 Sep 2026US 2026/0285038 A1Seiko Epson Corporation
- Piezoelectric laminate, piezoelectric element, and method for manufacturing piezoelectric laminate17 Sep 2026US 2026/0282751 A1AGC Inc.
- Ferroelectric iii-nitride heterostructures27 Aug 2026US 2026/0255642 A1The Regents of the University of Michigan
- Method for manufacturing a structure comprising a barrier layer to prevent diffusion of atomic species27 Aug 2026US 2026/0255879 A1
Most cited
By later US patents
- Substrate structures for electronic devices212US 6,045,626 ATDK Corporation · 2000
- Cubic metal oxide thin film epitaxially grown on silicon138US 5,270,298 ABell Communications Research, Inc. · 1993
- Thin film piezoelectric device100US 6,198,208 B1TDK Corporation · 2001
- Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film59US 7,758,979 B2Denso Corporation · 2010
- Fiber-optic piezoelectric devices49US 5,135,295 AQueen's University at Kingston · 1992