US 6,045,626 AGranted

Substrate structures for electronic devices

AssigneeTDK Corporation

InventorsYoshihiko Yano, Takao Noguchi

Life of this patent

Estimating the term…

Loading patent…

Abstract

A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin film composed mainly of a rare earth oxide and/or zirconium oxide, an AMnO.sub.3 thin film composed mainly of rare earth element A, Mn and O and having a hexagonal YMnO.sub.3 type structure, an AlO.sub.x thin film composed mainly of Al and O, and a NaCl type nitride thin film composed mainly of titanium nitride, niobium nitride, tantalum nitride or zirconium nitride. The surface layer is an epitaxial film containing a wurtzite type oxide and/or nitride. The surface layer can serve as a functional film such as a semiconductor film or an underlying film therefor, and the substrate structure is useful for the manufacture of electronic devices.

Claims6

Dependent claims

A substrate structure for electronic devices, comprising a substrate having a surface, at least the substrate surface formed of single crystal silicon, a buffer layer on the substrate surface, and a surface layer on the buffer layer,

said buffer layer being constructed by an oxide buffer layer and/or a nitride buffer layer,
said oxide buffer layer including an R--Zr family oxide thin film which is an epitaxial film comprising an oxide of scandium, yttrium or a rare earth element and/or zirconium oxide, an AMnO.sub.3 base thin film which is an epitaxial film comprising A, manganese and oxygen wherein A is scandium, yttrium or a rare earth element and having a crystal structure of hexagonal YMnO.sub.3 type, an AlO.sub.x base thin film which is an epitaxial film comprising aluminum and oxygen, or a combination of said R--Zr family oxide thin film with said AMnO.sub.3 base thin film and/or said AlO.sub.x base thin film,
said nitride buffer layer including a NaCl type nitride thin film which is an epitaxial film comprising at least one of titanium nitride, niobium nitride, tantalum nitride and zirconium nitride,
said surface layer including an oxide epitaxial film having a wurtzite type crystal structure and/or a nitride epitaxial film having a wurtzite type crystal structure.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 09/102,568Filed 23 Jun 1998
Priority: JP 9-20240911 Jul 1997
Granted: 4 Apr 2000
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10H 20/01335
With a substrate not being Group III-V materials: the light-emitting regions comprising nitride materials
H10N 30/076
By depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing: by vapour phase deposition
H10N 30/079
By depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing: using intermediate layers, e.g. for growth control
H10N 30/708
Characterised by the underlying bases, e.g. substrates: intermediate layers, e.g. barrier, adhesion or growth control buffer layers