H10N 30/706
Characterised by the underlying bases
Official title: {characterised by the underlying bases, e.g. substrates}
H10N30/706 (Characterised by the underlying bases) appears on 661 US grants and 883 published applications in this corpus.
Search patents in H10N- Granted patents
- 661
- Published applications
- 883
- Assignees
- 263
- Inventors
- 1,359
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 0 | 0 |
| 1997 | 4 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 1 |
| 2002 | 4 | 5 |
| 2003 | 4 | 10 |
| 2004 | 5 | 6 |
| 2005 | 5 | 19 |
| 2006 | 9 | 15 |
| 2007 | 14 | 8 |
| 2008 | 5 | 11 |
| 2009 | 14 | 10 |
| 2010 | 7 | 17 |
| 2011 | 16 | 15 |
| 2012 | 12 | 26 |
| 2013 | 14 | 38 |
| 2014 | 22 | 33 |
| 2015 | 31 | 42 |
| 2016 | 39 | 34 |
| 2017 | 31 | 63 |
| 2018 | 33 | 54 |
| 2019 | 43 | 55 |
| 2020 | 57 | 68 |
| 2021 | 33 | 70 |
| 2022 | 42 | 68 |
| 2023 | 54 | 88 |
| 2024 | 54 | 42 |
| 2025 | 51 | 45 |
| 2026 | 40 | 40 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Hybrid structure for a surface acoustic wave device6 Oct 2026US 12,757,634 B2Soitec
- Microphone device based on two-dimensional piezoelectric material layer having protective layer formed thereon, and method for fabricating the same22 Sep 2026US 12,745,045 B2Research & Business Foundation Sungkyunkwan University
- Manufacturing method of piezoelectric element, piezoelectric element, and liquid droplet dispensing head22 Sep 2026US 12,745,565 B2Seiko Epson Corporation
- Piezoelectric acoustic resonator with dielectric protective layer manufactured with piezoelectric thin film transfer process15 Sep 2026US 12,738,916 B2Akoustis Technologies Corp.
- Piezoelectric element including diffusion inhibition layer between substrate and piezoelectric layer, and piezoelectric element application device1 Sep 2026US 12,727,388 B2Seiko Epson Corporation
- Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus1 Oct 2026US 2026/0296010 A1Seiko Epson Corporation
- Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus24 Sep 2026US 2026/0285038 A1Seiko Epson Corporation
- Piezoelectric laminate, piezoelectric element, and method for manufacturing piezoelectric laminate17 Sep 2026US 2026/0282750 A1AGC Inc.
- Piezoelectric laminate, piezoelectric element, and method for manufacturing piezoelectric laminate17 Sep 2026US 2026/0282751 A1AGC Inc.
- Ferroelectric iii-nitride heterostructures27 Aug 2026US 2026/0255642 A1The Regents of the University of Michigan
Most cited
By later US patents
- Substrate structures for electronic devices212US 6,045,626 ATDK Corporation · 2000
- Piezoelectric/electrostrictive actuator having integral ceramic base member and film-type piezoelectric/electrostrictive element (S)146US 5,475,279 ANGK Insulators, Ltd. · 1995
- Cubic metal oxide thin film epitaxially grown on silicon138US 5,270,298 ABell Communications Research, Inc. · 1993
- Thin film piezoelectric device100US 6,198,208 B1TDK Corporation · 2001
- Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film88US 5,126,615 ANGK Insulators, Ltd. · 1992