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US 6,198,208 B1Granted
Thin film piezoelectric device
AssigneeTDK Corporation
InventorsYoshihiko Yano, Takao Noguchi, Hidenori Abe, Hisatoshi Saitou
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Abstract
A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.
Claims3
A thin film piezoelectric device comprising a silicon substrate, a metal thin film in the form of an epitaxial film on the substrate, and a PZT thin film on the metal thin film, said PZT thin film having a Ti/(Ti+Zr) atomic ratio of from 0.65 to 0.90.
Dependencies are inferred from the claim text.