Piezoelectric element including diffusion inhibition layer between substrate and piezoelectric layer, and piezoelectric element application device

Abstract

A piezoelectric element according to the present disclosure includes: a substrate containing silicon; a first electrode formed on the substrate; a piezoelectric layer formed on the first electrode and containing potassium, sodium, and niobium; and a second electrode formed on the piezoelectric layer, in which a first diffusion inhibition layer containing an insulating material is disposed between the substrate and the piezoelectric layer, the piezoelectric layer is continuously formed on a first region which is a surface of the first electrode, a second region which is a surface of the first diffusion inhibition layer, and a third region which is a surface of the substrate, and the third region is between the first region and the second region.

Dependencies are inferred from the claim text.