Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film

A piezoelectric thin film comprising an aluminum nitride thin containing scandium,

• a content ratio of the scandium being in a range of 10 atom % to 35 atom % or 40 atom % to 50 atom % on an assumption that a total amount of a number of atoms of the scandium and a number of atoms of aluminum in the aluminum nitride thin film is 100 atom %.

A piezoelectric material comprising an aluminum nitride thin film provided on a substrate and containing scandium,

• a content ratio of the scandium being in a range of 15 atom % to 45 atom % on an assumption that a total amount of a number of atoms of the scandium and a number of atoms of aluminum in the aluminum nitride is 100 atom %,
• the aluminum nitride thin film and the substrate sandwiching at least one layer of an intermediate layer, and
• the intermediate layer being another aluminum nitride thin film containing scandium at a content ratio different from that of the aluminum nitride thin film.

The A piezoelectric material comprising an aluminum nitride that contains scandium,

• a content ratio of the scandium being in a range of 10 atom % to 35 atom % or 40 atom % to 50 atom % on the assumption that the total amount of the number of atoms of the scandium and the number of atoms of the aluminum in the aluminum nitride is 100 atom %.