Method for manufacturing a structure comprising a barrier layer to prevent diffusion of atomic species

A method for manufacturing a structure comprising a thin layer formed from a lithium-based material and transferred onto a support via an interlayer dielectric layer comprising a first dielectric layer, a silicon nitride barrier layer and a second dielectric layer, the support comprising an electric charge-trapping layer arranged superficially, on the thin layer side, on a base substrate, the method comprising

• forming the first dielectric layer on the electric charge-trapping layer arranged on a main face of the support;
• forming the silicon nitride barrier layer on and in contact with the first dielectric layer and having a thickness of at least 20 nm, between 20% and 30% of a thickness of the interlayer dielectric layer;
• forming the second dielectric layer on and in contact with the silicon nitride barrier layer;
• assembling the main face of the support and a main face of a donor substrate to form an intermediate structure;
• and
• removing part of the donor substrate from the intermediate structure to define the thin layer on the support.