H10K 10/491
Vertical transistors
Official title: {Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]}
H10K10/491 (Vertical transistors) appears on 217 US grants and 282 published applications in this corpus.
Search patents in H10K- Granted patents
- 217
- Published applications
- 282
- Assignees
- 119
- Inventors
- 519
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 0 | 5 |
| 2003 | 5 | 7 |
| 2004 | 7 | 13 |
| 2005 | 7 | 16 |
| 2006 | 7 | 13 |
| 2007 | 6 | 7 |
| 2008 | 6 | 18 |
| 2009 | 13 | 16 |
| 2010 | 18 | 23 |
| 2011 | 10 | 14 |
| 2012 | 12 | 15 |
| 2013 | 13 | 10 |
| 2014 | 14 | 15 |
| 2015 | 6 | 7 |
| 2016 | 10 | 13 |
| 2017 | 18 | 18 |
| 2018 | 7 | 10 |
| 2019 | 11 | 6 |
| 2020 | 9 | 9 |
| 2021 | 8 | 8 |
| 2022 | 7 | 10 |
| 2023 | 7 | 11 |
| 2024 | 7 | 8 |
| 2025 | 6 | 7 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gas sensor based on thiophene-based high performance organic semiconducting materials with large surface area vertical device design16 Jun 2026US 12,656,304 B2Corning Incorporated
- Transistor device12 May 2026US 12,628,489 B2Infineon Technologies Austria AG
- 2D-channel transistor structure with asymmetric substrate contacts30 Sep 2025US 12,433,003 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Tunable gaussian heterojunction transistors, fabricating methods and applications of same2 Sep 2025US 12,406,179 B2Northwestern University
- Vertical organic electrochemical transistor pairs17 Jun 2025US 12,336,361 B2Northwestern University
- Method for producing vertical organic light-emitting transistor device, display27 Aug 2026US 2026/0255865 A1
- Helical graphene nanoribbon for organic electrochemical transistors and conformable electrode array28 May 2026US 2026/0150477 A1Cornell University
- 2D-Channel Transistor Structure with Asymmetric Substrate Contacts20 Nov 2025US 2025/0359266 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Vertical field effect device and method of manufacturing4 Sep 2025US 2025/0280561 A1Ideaded, S.L.
- Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor8 May 2025US 2025/0151347 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Deposition on a nanowire using atomic layer deposition350US 8,900,935 B2International Business Machines Corporation · 2014
- Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method242US 6,515,339 B2LG Electronics Inc. · 2003
- Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof122US 6,566,704 B2Samsung Electronics Co., Ltd. · 2003
- Nanotube semiconductor devices and methods for making the same86US 6,858,891 B2Micron Technology, Inc. · 2005
- Nanotube semiconductor devices and methods for making the same84US 6,515,325 B1Micron Technology, Inc. · 2003