Gas sensor based on thiophene-based high performance organic semiconducting materials with large surface area vertical device design

An electronic sensing device comprising:

• a substrate;
• a cathode disposed on the substrate;
• an anode positively biased relative to the cathode;
• an insulating layer disposed between the cathode and the anode;
• and
• a semiconductor layer comprising an organic semiconductor polymer with the structure:
• wherein each x is independently NR5, S, Se, or O;
• each R1 is independently hydrogen, halogen, C1-C40 alkyl, C1-C40 alkenyl, C1-C40 alkynl, C1-C40 alkoxy, C1-C40 cycloalkyl, C1-C40 aryl, C1-C40 heteroaryl, C1-C40 heterocycloalkyl, C1-C40 conjugated group, any of which may be optionally substituted with C1-C20 alkyl, C1-C20 alkenyl, C1-C20 alkynyl, C3-C20 cycloalkyl, halogen, hydroxy, C6-C20 aryl, C6-C20 heteroaryl, alkoxy, carboxy, carboxylic acid, cyano, or heterocyclyl;
• each R5 is independently hydrogen or C1-C40 alkyl which may be optionally substituted with C1-C20 alkyl;
• m is an integer from 1 to 10;
• n is an integer from 2 to 10,000;
• and each Ar is independently an optionally substituted conjugated group, an optionally substituted aryl group, or an optionally substituted heteroaryl group;
• wherein the anode is disposed on the insulating layer, and the semiconductor layer contacts the cathode and the anode.