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US 12,336,361 B2Granted
Vertical organic electrochemical transistor pairs
AssigneeNorthwestern University
InventorsJonathan Rivnay, Reem B. Rashid, Robert J. Ciechowski
Life of this patent
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Abstract
Cofacial vertical organic electrochemical transistor (vOECT) pairs, electronic circuits into which the vOECT pairs are integrated, and methods for fabricating the vOECT pairs are provided. The vOECTs pairs are formed from a vertically stacked structure that includes a first layer of an electrically conducting material, a first layer of an electrically insulating material, and a second layer of an electrically conducting material. The vOECTs of the pairs are formed on opposing sidewalls of a trench formed in the stacked structure.
Claims22
A cofacial vertical organic electrochemical transistor pair comprising:
- a vertically stacked structure comprising:
- a first layer of electrically conducting material;
- a second layer of electrically conducting material;
- and
- a layer of electrically insulating material separating the first layer of electrically conducting material from the second layer of electrically conducting material;
- a trench extending vertically through the vertically stacked structure, wherein the trench bisects one or both of the first and second layers of electrically conducting material;
- a film of active material in the trench, wherein the film of active material spans the first and second layers of electrically conducting material on a first side of the trench and spans the first and second layers of electrically conducting material on an opposing side of the trench;
- an electrolyte at least partially filling the trench;
- and
- a gate electrode in contact with the electrolyte.
7 more elements
A complementary inverter comprising:
- a vertically stacked structure comprising:
- a first layer of electrically conducting material;
- a second layer of electrically conducting material;
- and
- a layer of electrically insulating material separating the first layer of electrically conducting material from the second layer of electrically conducting material;
- a trench extending vertically through the vertically stacked structure, wherein the trench bisects the first layer of electrically conducting material, but does not bisect the second layer of electrically conducting material;
- a film of active material in the trench, wherein the film of active material spans the first and second layers of electrically conducting material on a first side of the trench and spans the first and second layers of electrically conducting material on an opposing side of the trench;
- an electrolyte at least partially filling the trench;
- a gate electrode in contact with the electrolyte;
- a voltage source connected to the first layer of electrically conducting material on the first side of the trench;
- and
- a ground connected to the first layer of electrically conducting material on the second side of the trench.
9 more elements
A differential pair comprising:
- a vertically stacked structure comprising:
- a first layer of electrically conducting material;
- a second layer of electrically conducting material;
- and
- a layer of electrically insulating material separating the first layer of electrically conducting material from the second layer of electrically conducting material;
- a trench extending vertically through the vertically stacked structure, wherein the trench bisects the first layer of electrically conducting material, but does not bisect the second layer of electrically conducting material;
- a film of active material in the trench, wherein the film of active material spans the first and second layers of electrically conducting material on a first side of the trench and spans the first and second layers of electrically conducting material on an opposing side of the trench;
- an electrolyte at least partially filling the trench;
- a gate electrode in contact with the electrolyte;
- a voltage source connected across the bisected first layer of electrically conducting material;
- and
- a ground connected to the second layer of electrically conducting material.
9 more elements
A method for forming a vertical organic electrochemical transistor, the method comprising:
- forming a vertically stacked structure on a support substrate, the vertically stacked structure comprising, from bottom to top:
- a first layer of electrically conducting material;
- a first layer of electrically insulating material over the first layer of electrically conducting material;
- a second layer of electrically conducting material over the first layer of electrically insulating material;
- a second layer of electrically insulating material over the second layer of electrically conducting material;
- and
- a hydrophobic capping layer over the second layer of electrically insulating material;
- forming a trench in a central portion of the vertically stacked structure, the trench extending from the capping layer down through the first layer of electrically conducting material;
- depositing a liquid comprising an organic active material in the trench;
- evaporating the liquid to form a film of the organic active material in the trench, wherein the film of organic active material laterally spans the width of the trench and vertically spans the first and second layers of electrically conducting material;
- filling the trench with an electrolyte;
- and
- placing a gate electrode in electrical communication with the organic active material.
10 more elements
Dependencies are inferred from the claim text.