Tunable gaussian heterojunction transistors, fabricating methods and applications of same

A method for fabricating a Gaussian heterojunction transistor (GHeT), comprising:

• fabricating a self-aligned bottom gate having a bottom gate electrode formed on a substrate, and a first dielectric layer formed on the bottom gate electrode;
• transferring a monolayer of an atomically thin material onto the self-aligned bottom gate and patterned using reactive ion etching (RIE);
• fabricating a self-aligned bottom contact on the monolayer followed by patterning and growth of a dielectric layer as an etch mask on part of the monolayer;
• wherein the self-aligned bottom contact has a bottom contact electrode and a second dielectric layer formed on the bottom contact electrode;
• depositing a top contact on the top of the bottom contact followed by transfer of a network of carbon nanotubes (CNTs) over the substrate, after which the RIE is performed to define an overlap region of the CNT network with the monolayer, the overlap region being a junction region;
• growing a third dielectric layer over the substrate;
• and
• forming a top gate on the third dielectric layer at least over the junction region.

A circuit for spiking neuron, comprising:

• at least one Gaussian heterojunction transistor (GHeT);
• first and second transistors T1 and T2 coupled to the GHeT;
• and
• a number of passive elements including first and second resistors R1 and R2 and first and second capacitors C1 and C2,
• configured such that the GHeT and circuit components T1-R1-C1 operably emulate conductance of a Na+ ion channel (gNa), while circuit components T2-R2-C2 operably emulate conductance of a K+ ion channel (gk).