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US 6,515,325 B1Granted
Nanotube semiconductor devices and methods for making the same
AssigneeMicron Technology, Inc.
InventorsWarren M. Farnworth, Kevin G. Duesman
Life of this patent
Estimating the term…
Abstract
Provided herein are vertical nanotube semiconductor devices and methods for making the same. An embodiment of the semiconductor devices comprises a vertical transistor/capacitor cell including a nanotube. The device includes a vertical transistor and a capacitor cell both using a single nanotube to form the individual devices.
Claims14
A semiconductor memory device comprising:
- a substrate having electrical circuitry formed thereon;
- a nanotube connected substantially orthogonal to the substrate;
- a conductive ring about the exterior of the nanotube, the conductive ring providing electrical connection from the nanotube to the electrical circuitry on the substrate;
- and
- wherein the nanotube forms a cell of a capacitor and a channel of a transistor.
2 more elements
A memory cell comprising:
- a vertical transistor including a gate, source, drain, and channel wherein a nanotube forms the channel;
- and
- wherein the nanotube forms a cell of a capacitor.
A memory cell comprising:
- a vertical transistor having about a 6 kohm connection resistance, the vertical transistor including a gate, source, drain, and channel, wherein a nanotube forms the channel;
- and
- a capacitor, wherein the nanotube forms a cell of the capacitor.
A semiconductor device comprising:
- a transistor including a source, a drain, a gate and a channel;
- a capacitor including a source, a gate, and a cell;
- a single carbon nanotube connected to the source and drain to form the channel of the transistor and the cell of the capacitor.
Dependencies are inferred from the claim text.