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AssigneeLG Electronics Inc.
InventorsJin Koog Shin, Kyu Tae Kim, Min Jae Jung, Sang Soo Yoon, Young Soo Han, Jae Eun Lee
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Disclosed is a method of horizontally growing carbon nanotubes, in which the carbon nanotubes can be selectively grown in a horizontal direction at specific locations of a substrate having catalyst formed thereat, so that the method can be usefully utilized in fabricating nano-devices. The method includes the steps of: (a) forming a predetermined catalyst pattern on a first substrate; (b) forming a vertical growth preventing layer on the first substrate, which prevents carbon nanotubes from growing in a vertical direction; (c) forming apertures through the vertical growth preventing layer and the first substrate to expose the catalyst pattern through the apertures; and (d) synthesizing carbon nanotubes at exposed surfaces of the catalyst pattern in order to grow the carbon nanotubes in the horizontal direction.
A field effect transistor comprising a source, a drain, a first catalyst region in said source, a second catalyst region in said drain, a growth preventing layer on at least one of said first and second catalyst regions, and a carbon nanotube bridge between the source and the drain, wherein the carbon nanotube bridge being formed with carbon nanotubes grown in a horizontal direction between said first and second catalyst regions, and said growth preventing layer preventing vertical growth of said nanotubes, so that the field effect transistor can control the flow of electrons in said nanotubes.
Dependencies are inferred from the claim text.