H10H 20/0125
With a substrate not being group ii-vi materials
Official title: {with a substrate not being Group II-VI materials}
H10H20/0125 (With a substrate not being group ii-vi materials) appears on 146 US grants and 76 published applications in this corpus.
Search patents in H10H- Granted patents
- 146
- Published applications
- 76
- Assignees
- 94
- Inventors
- 311
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 9 | 0 |
| 1994 | 5 | 0 |
| 1995 | 10 | 0 |
| 1996 | 9 | 0 |
| 1997 | 5 | 0 |
| 1998 | 8 | 0 |
| 1999 | 7 | 0 |
| 2000 | 6 | 0 |
| 2001 | 3 | 2 |
| 2002 | 8 | 8 |
| 2003 | 7 | 3 |
| 2004 | 3 | 3 |
| 2005 | 1 | 3 |
| 2006 | 3 | 1 |
| 2007 | 2 | 1 |
| 2008 | 0 | 5 |
| 2009 | 1 | 3 |
| 2010 | 1 | 2 |
| 2011 | 4 | 6 |
| 2012 | 5 | 7 |
| 2013 | 7 | 4 |
| 2014 | 5 | 7 |
| 2015 | 2 | 3 |
| 2016 | 4 | 4 |
| 2017 | 7 | 3 |
| 2018 | 0 | 2 |
| 2019 | 4 | 0 |
| 2020 | 0 | 0 |
| 2021 | 1 | 4 |
| 2022 | 0 | 1 |
| 2023 | 1 | 1 |
| 2024 | 2 | 2 |
| 2025 | 2 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- LED chip based on alumina-silica composite substrate and fabrication method thereof26 May 2026US 12,641,922 B2Focus Lightings Tech Co., Ltd.
- Method for manufacturing optoelectronic devices11 Nov 2025US 12,471,411 B2STMicroelectronics (Crolles 2) SAS
- Digital doping and development of a transparent conductor7 Jan 2025US 12,191,412 B2Bowling Green State University
- InGaN-based led epitaxial wafer and fabrication method thereof11 Jun 2024US 12,009,455 B2Univ South China Normal
- Method for manufacturing single-crystal semiconductor layer, structure comprising single-crystal semiconductor layer, and semiconductor device comprising structure2 Apr 2024US 11,948,795 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Led chip based on alumina-silica composite substrate and fabrication method thereof6 Mar 2025US 2025/0081672 A1Focus Lightings Tech Co., Ltd.
- Growth substrate and method for manufacturing an optoelectronic semiconductor body11 Jul 2024US 2024/0234136 A9
- Growth substrate and method for manufacturing an optoelectronic semiconductor body25 Apr 2024US 2024/0136176 A1
- Method for manufacturing optoelectronic devices9 Nov 2023US 2023/0361241 A1STMicroelectronics (Crolles 2) SAS
- Ingan-based led epitaxial wafer and fabrication method thereof14 Apr 2022US 2022/0115560 A1Univ South China Normal
Most cited
By later US patents
- Wafer bonding of light emitting diode layers336US 5,376,580 AHewlett-Packard Company · 1994
- Semicoductor device having a hetero interface with a lowered barrier272US 5,821,555 AKabushiki Kaisha Toshiba · 1998
- Method of manufacturing P-type compound semiconductor198US 5,306,662 ANichia Chemical Industries, Ltd. · 1994
- Wafer bonding of light emitting diode layers149US 5,502,316 AHewlett-Packard Company · 1996
- Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy145US 5,395,791 AMinnesota Mining and Manufacturing Company · 1995