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US 12,191,412 B2Granted
Digital doping and development of a transparent conductor
AssigneeBowling Green State University
InventorFarida Selim
Life of this patent
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Abstract
Compositions, thin films, devices, and methods involving doped oxide semiconductor materials are described. Indium gallium doped zinc oxide (IGZO) with advantageous properties that may be useful as a transparent conductive oxide (TCO) is described. Methods of digital doping to create doped oxide semiconductor materials are described.
Claims17
A method for doping an oxide semiconductor material, wherein the method comprises:
- (i) depositing a first single atomic layer of a first oxide semiconductor on a substrate;
- (ii) depositing at least a second single atomic layer of the first oxide semiconductor directly on the first single atomic layer to form a plurality of atomic layers of the first oxide semiconductor on the substrate;
- and
- (iii) depositing one atomic layer of a first dopant material on the plurality of atomic layers of the first oxide semiconductor using H2O as an oxidant to obtain a doped oxide semiconductor material, wherein the first dopant material comprises gallium or indium;
- (iv) depositing one atomic layer of a second dopant material directly on the one atomic layer of the first dopant material;
- and
- (v) repeating steps (i)-(iv) so as to obtain a doped oxide semiconductor material, wherein the doped oxide semiconductor material is a film having the first dopant material present in an amount of about 1 at % and the second dopant material present in an amount of about 1 at %.
4 more elements
A method for doping an oxide semiconductor material, wherein the method comprises:
- depositing a first atomic layer of 49 atomic layers of a first oxide semiconductor on a substrate;
- depositing each remaining atomic layer of the 49 atomic layers of the first oxide semiconductor directly on a preceding layer of the 49 atomic layers of the first oxide semiconductor;
- depositing one atomic layer of a first dopant material on the 49 atomic layers of the first oxide semiconductor using H2O as an oxidant to dope the first oxide semiconductor, wherein the first dopant material comprises gallium or indium;
- depositing one atomic layer of a second dopant material directly on the one atomic layer of the first dopant material;
- and
- depositing 49 atomic layers of the first oxide semiconductor on the one atomic layer of the second dopant material to obtain a doped oxide semiconductor material;
- wherein the doped oxide semiconductor material is a film having the first dopant material present in an amount of about 1 at % and having the second dopant material present in an amount of about 1 at %.
4 more elements
Dependencies are inferred from the claim text.