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US 2022/0115560 A1Published application
InGaN-BASED LED EPITAXIAL WAFER AND FABRICATION METHOD THEREOF
AssigneeUniv South China Normal
InventorRichard NOTZEL
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Abstract
An InGaN-based LED epitaxial wafer and a fabrication method thereof are disclosed, wherein the InGaN-based LED epitaxial wafer includes: a substrate; an InGaN layer, formed on a surface of the substrate, having an In content between 40% and 90%, so as to ensure that the LED epitaxial wafer is capable of emitting long-wavelength light or near-infrared rays; a p-type metal oxide layer, formed on a surface of the InGaN layer facing away from the substrate, acting as a hole injection layer for the InGaN layer.
Claims10
An InGaN-based LED epitaxial wafer, comprising:
- a substrate;
- an InGaN layer, formed on a surface of the substrate, having an In content between 40% and 90%, so as to ensure that the LED epitaxial wafer is capable of emitting long wavelength light or near-infrared rays;
- and
- a p-type metal oxide layer, formed on a surface of the InGaN layer facing away from the substrate, acting as a hole injection layer for the InGaN layer.
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A fabrication method for an InGaN-based LED epitaxial wafer, comprising:
- providing a substrate;
- epitaxially growing an InGaN layer on a surface of the substrate;
- and
- depositing and forming a p-type metal oxide layer on a surface of the InGaN layer facing away from the substrate.
1 more element
Dependencies are inferred from the claim text.