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US 2024/0136176 A1Published application
Growth substrate and method for manufacturing an optoelectronic semiconductor body
OwnerJelena Risticinventor
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Abstract
In an embodiment a growth substrate includes a substrate and a buffer layer sequence having a plurality of semiconductor layers based on a nitride semiconductor compound material and a plurality of buffer layers, wherein the semiconductor layers and the buffer layers are arranged alternatingly, and wherein the buffer layers comprise at least one of the following two-dimensional layered materials: graphene, boron nitride, MoS2, WSe2 or fluorographene.
Claims17
1-18. (canceled)
A growth substrate comprising:
- a substrate;
- and
- a buffer layer sequence comprising a plurality of semiconductor layers based on a nitride semiconductor compound material and a plurality of buffer layers,
- wherein the semiconductor layers and the buffer layers are arranged alternatingly, and
- wherein the buffer layers comprise at least one of the following two-dimensional layered materials:
- graphene, boron nitride, MoS2, WSe2 or fluorographene.
3 more elements
Dependencies are inferred from the claim text.