Method for manufacturing single-crystal semiconductor layer, structure comprising single-crystal semiconductor layer, and semiconductor device comprising structure

A method of manufacturing a single crystalline semiconductor layer, comprising:

• performing a unit cycle multiple times to form the single crystalline semiconductor layer on a single crystalline substrate,
• wherein the unit cycle includes the steps of:
• a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of the single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased;
• a metal precursor purge operation in which the chamber is purged after the metal precursor pressurized dosing operation;
• a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation;
• and
• a reactive gas purge operation in which the chamber is purged after the reactive gas supplying operation,
• wherein the single crystalline substrate is a substrate having a hexagonal crystal structure, and the single crystalline semiconductor layer is a semiconductor layer having a hexagonal wurtzite structure.