Method for manufacturing optoelectronic devices

A manufacturing method, comprising:

• providing a plurality of first layers covering a first support;
• wherein each first layer is made of a first semiconductor material;
• wherein the first layers are spaced apart from each other;
• epitaxially growing, on each first layer, a second layer made of a second semiconductor material;
• epitaxially growing, on each second layer, a stack of semiconductor layers;
• wherein said stack of semiconductor layers comprises a third layer made of a third semiconductor material in physical contact with the second layer;
• etching the second layer to separate each stack of semiconductor layers from the first layer;
• wherein said etching is selective simultaneously over both the first and third semiconductor materials;
• and
• transferring each separated stack of semiconductor layers onto a second support;
• wherein each of the first and third semiconductor materials is one of a III-V compound or a II-VI compound.