H10D 86/40
Integrated devices formed in or on insulating or conducting substrates: characterised by
Official title: characterised by multiple TFTs
H10D86/40 (Integrated devices formed in or on insulating or conducting substrates: characterised by) appears on 24,318 US grants and 28,752 published applications in this corpus.
Search patents in H10D- Granted patents
- 24,318
- Published applications
- 28,752
- Assignees
- 1,344
- Inventors
- 18,898
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 4 | 0 |
| 1987 | 11 | 0 |
| 1988 | 4 | 0 |
| 1989 | 9 | 0 |
| 1990 | 7 | 0 |
| 1991 | 10 | 0 |
| 1992 | 13 | 0 |
| 1993 | 19 | 0 |
| 1994 | 28 | 0 |
| 1995 | 32 | 0 |
| 1996 | 54 | 0 |
| 1997 | 70 | 0 |
| 1998 | 105 | 0 |
| 1999 | 104 | 0 |
| 2000 | 114 | 0 |
| 2001 | 118 | 123 |
| 2002 | 180 | 299 |
| 2003 | 241 | 297 |
| 2004 | 275 | 417 |
| 2005 | 263 | 536 |
| 2006 | 326 | 568 |
| 2007 | 351 | 714 |
| 2008 | 390 | 749 |
| 2009 | 496 | 773 |
| 2010 | 703 | 816 |
| 2011 | 772 | 1029 |
| 2012 | 761 | 866 |
| 2013 | 948 | 912 |
| 2014 | 1033 | 1098 |
| 2015 | 1136 | 1550 |
| 2016 | 1394 | 1921 |
| 2017 | 1672 | 1934 |
| 2018 | 1618 | 1896 |
| 2019 | 1899 | 1951 |
| 2020 | 1752 | 1762 |
| 2021 | 1380 | 1920 |
| 2022 | 1360 | 1489 |
| 2023 | 1204 | 1519 |
| 2024 | 1361 | 1656 |
| 2025 | 1359 | 1199 |
| 2026 | 733 | 758 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 86/60Wherein the tfts are in active matrices24,251
- H10D 86/441Interconnections12,670
- H10D 86/421Having a particular composition, shape or crystalline structure of the active layer9,095
- H10D 86/481Integrated with passive devices4,803
- H10D 86/451Characterised by the compositions or shapes of the interlayer dielectrics3,798
- H10D 86/411Characterised by materials, geometry or structure of the substrates2,498
- H10D 86/471Having different architectures1,514
- H10D 86/431Having different compositions, shapes, layouts or thicknesses of gate insulators in different504
Recent patents
- Method of fabricating metal mask6 Oct 2026US 12,752,329 B2Darwin Precisions Corporation
- Display apparatuses, display panels, and methods of driving display panels6 Oct 2026US 12,755,672 B2BOE MLED Technology Co., Ltd.
- Semiconductor device and method for driving semiconductor device6 Oct 2026US 12,755,697 B2Semiconductor Energy Laboratory Co.Ltd.
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Electronic device and manufacturing method of electronic device6 Oct 2026US 12,757,487 B2Innolux Corporation
- Liquid crystal display device and manufacturing method thereof8 Oct 2026US 2026/0310017 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device, display device, display module, and electronic device8 Oct 2026US 2026/0310031 A1Semiconductor Energy Laboratory Co.Ltd.
- Extension wires and connection wires for position detection device and sensor panel8 Oct 2026US 2026/0310316 A1Wacom Co., Ltd.
- Organic light-emitting display apparatus8 Oct 2026US 2026/0311645 A1Samsung Display Co., Ltd.
- Shift register, gate driving circuit and display substrate with conductive lines between output transistor and capacitor structure8 Oct 2026US 2026/0311646 A1Boe Technology Group Co., Ltd.
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Thin film transistor and matrix display device3,999US 6,563,174 B2Sharp Kabushiki Kaisha · 2003
- Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator1,026US 7,601,984 B2Canon Kabushiki Kaisha · 2009
- Package with metal-insulator-metal capacitor and method of manufacturing the same1,021US 9,263,511 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016