H10D 84/813
Combinations of field-effect devices and capacitor only
Official title: {Combinations of field-effect devices and capacitor only}
H10D84/813 (Combinations of field-effect devices and capacitor only) appears on 1,232 US grants and 1,310 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,232
- Published applications
- 1,310
- Assignees
- 284
- Inventors
- 2,221
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 9 | 0 |
| 1978 | 3 | 0 |
| 1979 | 5 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 4 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 4 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 13 | 0 |
| 1999 | 16 | 0 |
| 2000 | 22 | 0 |
| 2001 | 32 | 12 |
| 2002 | 28 | 18 |
| 2003 | 26 | 37 |
| 2004 | 22 | 30 |
| 2005 | 21 | 36 |
| 2006 | 29 | 39 |
| 2007 | 27 | 41 |
| 2008 | 21 | 28 |
| 2009 | 27 | 31 |
| 2010 | 29 | 36 |
| 2011 | 35 | 42 |
| 2012 | 28 | 36 |
| 2013 | 47 | 57 |
| 2014 | 54 | 60 |
| 2015 | 50 | 70 |
| 2016 | 73 | 73 |
| 2017 | 74 | 68 |
| 2018 | 72 | 65 |
| 2019 | 71 | 51 |
| 2020 | 59 | 71 |
| 2021 | 53 | 61 |
| 2022 | 54 | 74 |
| 2023 | 58 | 72 |
| 2024 | 54 | 69 |
| 2025 | 58 | 82 |
| 2026 | 22 | 51 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and electronic system including semiconductor device29 Sep 2026US 12,751,279 B2Samsung Electronics Co., Ltd.
- Capacitor structure embedded within source or drain region25 Aug 2026US 12,720,851 B2Intel Corporation
- Semiconductor device25 Aug 2026US 12,721,155 B2Samsung Electronics Co., Ltd.
- Display apparatus11 Aug 2026US 12,707,817 B2Samsung Display Co., Ltd.
- Semiconductor devices including backside capacitors and methods of manufacture11 Aug 2026US 12,707,963 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Through-substrate capacitor structures in ics with backside metallization1 Oct 2026US 2026/0305317 A1Intel Corporation
- Deep trench capacitors and methods of forming the same20 Aug 2026US 2026/0247693 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing the same20 Aug 2026US 2026/0247694 A1Renesas Electronics Corporation
- Semiconductor device13 Aug 2026US 2026/0238194 A1Semiconductor Energy Laboratory Co.Ltd.
- Integrated circuit structures with nanoribbon transistors and backside capacitors13 Aug 2026US 2026/0239717 A1
Most cited
By later US patents
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Subthreshold CMOS amplifier with offset adaptation214US 4,935,702 ASynaptics Incorporated · 1990
- Methods, structures, and circuits for transistors with gate-to-body capacitive coupling191US 6,448,615 B1Micron Technology, Inc. · 2002
- CMOS amplifier with offset adaptation153US 5,059,920 ASynaptics Incorporated · 1991
- CMOS amplifier with offset adaptation149US 5,068,622 ASynaptics Incorporated · 1991