Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate having a first surface and a second surface opposite to the first surface;
• active patterns protruding from the first surface of the semiconductor substrate in a first direction perpendicular to the second surface of the semiconductor substrate and spaced apart from each other in a second direction parallel to the second surface of the semiconductor substrate;
• a device isolation layer on the first surface of the semiconductor substrate and between the active patterns;
• gate electrodes provided on the first surface of the semiconductor substrate and crossing the active patterns and the device isolation layer;
• a power rail provided on the first surface of the semiconductor substrate and electrically connected to a source/drain region of a corresponding active pattern of the active patterns;
• lower interconnection lines provided on the second surface of the semiconductor substrate;
• a penetration via penetrating the semiconductor substrate and connecting a corresponding one of the lower interconnection lines to the power rail;
• and
• a capacitor electrically connected to a pair of the lower interconnection lines,
• wherein, in the first direction, the capacitor is between the respective lower interconnection lines of the pair of the lower interconnection lines, and
• wherein the lower interconnection lines are spaced apart from each other in the first direction and extend in the second direction.