H10D 84/613
Combinations of vertical bjts and one or more of diodes, resistors or
Official title: {Combinations of vertical BJTs and one or more of diodes, resistors or capacitors}
H10D84/613 (Combinations of vertical bjts and one or more of diodes, resistors or) appears on 837 US grants and 690 published applications in this corpus.
Search patents in H10D- Granted patents
- 837
- Published applications
- 690
- Assignees
- 178
- Inventors
- 1,118
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 23 | 0 |
| 1977 | 27 | 0 |
| 1978 | 8 | 0 |
| 1979 | 9 | 0 |
| 1980 | 14 | 0 |
| 1981 | 19 | 0 |
| 1982 | 7 | 0 |
| 1983 | 10 | 0 |
| 1984 | 7 | 0 |
| 1985 | 8 | 0 |
| 1986 | 7 | 0 |
| 1987 | 4 | 0 |
| 1988 | 4 | 0 |
| 1989 | 10 | 0 |
| 1990 | 13 | 0 |
| 1991 | 4 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 10 | 0 |
| 1995 | 6 | 0 |
| 1996 | 7 | 0 |
| 1997 | 3 | 0 |
| 1998 | 9 | 0 |
| 1999 | 9 | 0 |
| 2000 | 7 | 0 |
| 2001 | 10 | 4 |
| 2002 | 10 | 13 |
| 2003 | 17 | 15 |
| 2004 | 11 | 9 |
| 2005 | 8 | 6 |
| 2006 | 6 | 7 |
| 2007 | 3 | 15 |
| 2008 | 8 | 10 |
| 2009 | 7 | 12 |
| 2010 | 10 | 17 |
| 2011 | 14 | 6 |
| 2012 | 12 | 14 |
| 2013 | 13 | 19 |
| 2014 | 18 | 24 |
| 2015 | 38 | 35 |
| 2016 | 36 | 52 |
| 2017 | 37 | 49 |
| 2018 | 47 | 49 |
| 2019 | 41 | 50 |
| 2020 | 39 | 40 |
| 2021 | 28 | 50 |
| 2022 | 48 | 53 |
| 2023 | 32 | 49 |
| 2024 | 32 | 52 |
| 2025 | 39 | 28 |
| 2026 | 37 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Semiconductor device having multiple electrostatic discharge (ESD) paths22 Sep 2026US 12,745,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transient voltage suppressor structure having multiple discharging paths15 Sep 2026US 12,740,156 B2Amazing Microelectronic Corp.
- Semiconductor device including a FWD region formed on a substrate and IGBT region formed on the substrate8 Sep 2026US 12,733,247 B2Mitsubishi Electric Corporation
- Semiconductor device25 Aug 2026US 12,720,816 B2Mitsubishi Electric Corporation
- Semiconductor device and method of manufacturing semiconductor device9 Jul 2026US 2026/0198074 A1Mitsubishi Electric Corporation
- Integrated circuit devices including stacked elements and methods of forming the same2 Jul 2026US 2026/0190976 A1Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method25 Jun 2026US 2026/0182274 A1Fuji Electric Co., Ltd.
- Semiconductor ring surrounding vertical diode and related methods4 Jun 2026US 2026/0156921 A1GLOBALFOUNDRIES U. S. Inc.
- Bipolar transistor structure and radio frequency amplifier30 Apr 2026US 2026/0122936 A1Xiamen Sanan Integrated Circuit Co., Ltd.
Most cited
By later US patents
- Power transistor structure with high speed integral antiparallel Schottky diode84US 4,967,243 AGeneral Electric Company · 1990
- Semiconductor switching device78US 5,285,100 ATexas Instruments Incorporated · 1994
- Polysilicon Schottky clamped transistor and vertical fuse devices76US 5,144,404 ANational Semiconductor Corporation · 1992
- Techniques for controlling a direct injection semiconductor memory device66US 8,139,418 B2Micron Technology, Inc. · 2012
- Nanotube semiconductor devices60US 8,299,494 B2Alpha and Omega Semiconductor Incorporated · 2012