Semiconductor device and method of manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsHidenori FUJII, Koji TANAKA, Sho TANAKA, Shinya SONEDA
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Abstract
To provide a semiconductor device that includes: a semiconductor substrate provided with a semiconductor portion that is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region; an insulating film provided on the semiconductor portion; a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view; and a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated.
Claims12
A semiconductor device comprising:
- a semiconductor substrate provided with a semiconductor portion which is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region;
- an insulating film provided on the semiconductor portion;
- a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view;
- and
- a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated, wherein the semiconductor portion includes the pn junction provided in a temperature sense diode region of the semiconductor substrate, and
- at least a part of the lower surface of the plated electrode is in direct contact with the insulating film.
The semiconductor substrate provided with a semiconductor portion which is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region;
- an insulating film provided on the semiconductor portion;
- a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view;
- and
- a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated, wherein the semiconductor portion includes the drift layer provided in the terminal region, the drift layer being in direct contact with the insulating film, and
- at least a part of the lower surface of the plated electrode is in direct contact with the insulating film.
A method of manufacturing a semiconductor device, the method comprising:
- forming a semiconductor portion that is provided on a semiconductor substrate and is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region, and an insulating film provided on the semiconductor portion;
- forming a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view;
- and
- forming a plated electrode at at least a portion of an inside of the opening using the metal electrode as a material to be plated, wherein the semiconductor portion includes the pn junction provided in a temperature sense diode region of the semiconductor substrate, and
- at least a part of the lower surface of the plated electrode is in direct contact with the insulating film.
Dependencies are inferred from the claim text.