H10D 84/0121
The complementary bjts being vertical bjts
Official title: {the complementary BJTs being vertical BJTs}
H10D84/0121 (The complementary bjts being vertical bjts) appears on 195 US grants and 123 published applications in this corpus.
Search patents in H10D- Granted patents
- 195
- Published applications
- 123
- Assignees
- 68
- Inventors
- 276
- Latest grant
- 3 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 4 | 0 |
| 1990 | 7 | 0 |
| 1991 | 6 | 0 |
| 1992 | 8 | 0 |
| 1993 | 4 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 6 | 0 |
| 2000 | 0 | 0 |
| 2001 | 4 | 1 |
| 2002 | 3 | 3 |
| 2003 | 3 | 7 |
| 2004 | 6 | 12 |
| 2005 | 11 | 13 |
| 2006 | 4 | 5 |
| 2007 | 11 | 5 |
| 2008 | 1 | 17 |
| 2009 | 12 | 6 |
| 2010 | 7 | 6 |
| 2011 | 16 | 2 |
| 2012 | 8 | 3 |
| 2013 | 1 | 2 |
| 2014 | 3 | 4 |
| 2015 | 4 | 3 |
| 2016 | 5 | 3 |
| 2017 | 4 | 7 |
| 2018 | 8 | 6 |
| 2019 | 4 | 1 |
| 2020 | 0 | 2 |
| 2021 | 1 | 6 |
| 2022 | 5 | 4 |
| 2023 | 2 | 2 |
| 2024 | 3 | 1 |
| 2025 | 1 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Heterojunction bipolar transistor with buried trap rich isolation region3 Jun 2025US 12,324,227 B2GLOBALFOUNDRIES U. S. Inc.
- Complementary bipolar junction transistor3 Sep 2024US 12,078,551 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device21 May 2024US 11,990,534 B2Samsung Electronics Co., Ltd.
- Device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications9 Apr 2024US 11,955,481 B2STMicroelectronics (Crolles 2) SAS
- Heterojunction bipolar transistor with buried trap rich isolation region17 Oct 2023US 11,791,334 B2GLOBALFOUNDRIES U. S. Inc.
- Bipolar transistors25 Jun 2026US 2026/0181926 A1GLOBALFOUNDRIES U. S. Inc.
- Heterojunction bipolar transistor with buried trap rich isolation region7 Aug 2025US 2025/0254981 A1GLOBALFOUNDRIES U. S. Inc.
- Complementary bipolar junction transistor7 Nov 2024US 2024/0369421 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Heterojunction bipolar transistor with buried trap rich isolation region14 Dec 2023US 2023/0402453 A1GLOBALFOUNDRIES U. S. Inc.
- Method for fabricating a device comprising a pnp bipolar transistor and npn bipolar transistor for radiofrequency applications23 Mar 2023US 2023/0090291 A1STMicroelectronics (Crolles 2) SAS
Most cited
By later US patents
- Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology114US 6,855,985 B2Advanced Analogic Technologies (Hong Kong) Limited · 2005
- Control of dopant diffusion from buried layers in bipolar integrated circuits97US 8,247,300 B2Texas Instruments Incorporated · 2012
- Method of making bipolar transistors63US 4,826,780 AMatsushita Electric Industrial Co., Ltd. · 1989
- High frequency analog transistors, method of fabrication and circuit implementation51US 5,668,397 AHarris Corporation · 1997
- Double epitaxial method of fabricating semiconductor devices on bonded wafers44US 4,897,362 AHarris Corporation · 1990