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US 4,897,362 AGranted
Double epitaxial method of fabricating semiconductor devices on bonded wafers
AssigneeHarris Corporation
InventorsJose A. Delgado, George Bajor
Life of this patent
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Abstract
A method of forming a high-quality complementary transistor device using bonded wafer technology. The invention includes bonding a handle wafer to a first epitaxial layer and then providing dopants to form the respective N and P buried layers in said first epitaxial layer. A second epitaxial layer is then deposited over the buried layers to provide the device forming regions for the respective transistor devices.
Claims13
A method of manufacturing a semiconductor wafer comprising the steps of:
- (a) providing a first layer of semiconductor material formed on a first support structure;
- (b) providing a second layer of insulating material formed on a handle wafer;
- (c) bonding said first layer of semiconductor material to said second layer of insulating material;
- (d) removing said support structure from said first layer of semiconductor material and exposing a first surface of said first layer;
- (e) selectively providing a conductive layer in said first layer of semiconductor material subsequent to removing said support structure, said conductive layer having an exposed top surface;
- and
- (f) providing a second layer of semiconductor material on said exposed surface of said conductive layer.
4 more elements
A method of manufacturing a semiconductor wafer comprising:
- (a) providing a first epitaxial layer formed on a substrate material;
- (b) providing a first insulating layer formed on a handle wafer;
- (c) bonding said first epitaxial layer to said first insulating layer;
- (d) removing said substrate material from said first epitaxial layer and exposing a surface of said epitaxial layer;
- (e) selectively forming a conductive buried layer in said first epitaxial layer subsequent to removing said substrate material, said conductive buried layer having an exposed top surface;
- and
- (f) providing a second epitaxial layer formed on said exposed surface of said conductive buried layer.
4 more elements
Dependencies are inferred from the claim text.