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US 2023/0402453 A1Published application
Heterojunction bipolar transistor with buried trap rich isolation region
AssigneeGlobalFoundries U.S. Inc.
InventorsVibhor JAIN, John J. ELLIS-MONAGHAN, Anthony K. STAMPER, Steven M. SHANK, John J. PEKARIK
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich isolation region and methods of manufacture. The structure includes: a first heterojunction bipolar transistor; a second heterojunction bipolar transistor; and a trap rich isolation region embedded within a substrate underneath both the first heterojunction bipolar transistor and the second heterojunction bipolar transistor.
Claims19
A structure, comprising:
- a bipolar heterojunction transistor;
- a field effect transistor adjacent to the bipolar heterojunction transistor;
- shallow trench isolation structures separating the bipolar heterojunction transistor from the field effect transistor;
- and
- a trap rich isolation region under the both the bipolar heterojunction transistor and the field effect transistor, under the shallow trench isolation structures.
2 more elements
A structure comprising:
- a first type of heterojunction bipolar transistor;
- a second type of heterojunction bipolar transistor, different from the first type of heterojunction bipolar transistor;
- a trap rich isolation region embedded within a substrate underneath both the first heterojunction bipolar transistor and the second heterojunction bipolar transistor;
- and
- an isolation region within the substrate, under the trap rich isolation region and the second type of heterojunction bipolar transistor.
2 more elements
A method, comprising:
- forming a bipolar heterojunction transistor;
- forming a field effect transistor adjacent to the bipolar heterojunction transistor;
- forming shallow trench isolation structures separating the bipolar heterojunction transistor from the field effect transistor;
- and
- forming a trap rich isolation region under the both the bipolar heterojunction transistor and the field effect transistor, under the shallow trench isolation structures.
2 more elements
Dependencies are inferred from the claim text.