Complementary bipolar junction transistor

A semiconductor structure, comprising:

• a dielectric layer;
• and
• a fin-shaped structure disposed over the dielectric layer and extending along a direction, the fin-shaped structure comprising:
• a first p-type doped region and a second p-type doped region,
• a first n-type doped region disposed between the first p-type doped region and the second p-type doped region along the direction,
• a second n-type doped region and a third n-type doped region,
• a third p-type doped region disposed between the second n-type doped region and the third n-type doped region along the direction,
• wherein the first p-type doped region, the third p-type doped region and the third n-type doped region are electrically coupled together to a first potential,
• wherein the second p-type doped region, the first n-type doped region and the second n-type doped region are electrically coupled together to a second potential different from the first potential.

A semiconductor structure, comprising:

• a dielectric layer;
• and
• a fin-shaped structure disposed over the dielectric layer and extending along a direction, the fin-shaped structure comprising:
• a first p-type doped region and a second p-type doped region,
• a first n-type doped region disposed between the first p-type doped region and the second p-type doped region along the direction,
• a second n-type doped region and a third n-type doped region,
• a third p-type doped region disposed between the second n-type doped region and the third n-type doped region along the direction,
• wherein the first p-type doped region, the third p-type doped region and the third n-type doped region are electrically coupled together to a first potential,
• wherein the second p-type doped region, the first n-type doped region and the second n-type doped region are electrically coupled together to a second potential different from the first potential,
• wherein along the direction, a width of each of the first n-type doped region, the second n-type doped region, and the third n-type doped region is greater than a width of each of the first p-type doped region, the second p-type doped region, and the third p-type doped region.