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US 11,791,334 B2Granted
Heterojunction bipolar transistor with buried trap rich isolation region
AssigneeGlobalFoundries U.S. Inc.
InventorsVibhor Jain, John J. Ellis-Monaghan, Anthony K. Stamper, Steven M. Shank, John J. Pekarik
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich isolation region and methods of manufacture. The structure includes: a first heterojunction bipolar transistor; a second heterojunction bipolar transistor; and a trap rich isolation region embedded within a substrate underneath both the first heterojunction bipolar transistor and the second heterojunction bipolar transistor.
Claims12
A structure comprising:
- a first heterojunction bipolar transistor;
- a second heterojunction bipolar transistor;
- and
- a trap rich isolation region embedded within a substrate underneath both the first heterojunction bipolar transistor and the second heterojunction bipolar transistor,
- wherein the substrate comprises single crystalline semiconductor material and the trap rich isolation region comprises polysilicon crystalline semiconductor material embedded within the single crystalline semiconductor material and further comprising:
- a first sub-collector region under a collector region of the first heterojunction bipolar transistor and a second sub-collector region under a collector region of the second heterojunction bipolar transistor, wherein the first sub-collector region and the second sub-collector region are separated from the polysilicon crystalline semiconductor material by an upper portion of the single crystalline semiconductor material and separated from one another by a shallow trench isolation structure;
- and
- a doped isolation region under and separated from the second heterojunction bipolar transistor by a lower portion of the single crystalline semiconductor material ..
5 more elements
Dependencies are inferred from the claim text.